Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator
Year: 2024
Type: article
Abstract: A novel non-volatile photonic-electronic memory, 3D integrating an Al-doped HfO2 ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes, enables electrically/optically programmable, non-destructively readable, and multi-level storage functions.
Source: Light Science & Applications
Author: Hang Chen
Institution: Tsinghua University
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,190
OpenAlex ID: W4402886849