Work

A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3468468

Authors: Rui Yang, Xiaochuan Deng, Haibo Wu, Xu Li, Xuan Li, Song Bai, Yi Wen, Bo Zhang

Institution: University of Electronic Science and Technology of China

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation, National Natural Science Foundation of China, Key Programme, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G3277601219, G4325823706, G6156692778, G6279236503, G7821671914

OpenAlex ID: W4402895029

FWCI: 0.719

Cites: 23

Cited by: 7

Related to: 10