Work

Hot Carrier Degradation-Induced Variability in Different Lightly Doped Drain Processes: From Transistors to SRAM Cells

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3462380

Authors: Qiao Teng, Yongyu Wu, Kai Xu, Dawei Gao

Institution: Zhejiang University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Science and Technology Program of Zhejiang Province

Awards: G100426017, G1221216590

OpenAlex ID: W4402895801

FWCI: 0.52

Cites: 29

Cited by: 5

Related to: 10