Work

Impact of Total Ionizing Dose Effects on the Threshold Voltage Hysteresis of SiC MOSFETs

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3457572

Authors: Xiaowen Liang, Ying Wei, Dan Zhang, Jing Sun, Yudong Li, Xuefeng Yu, Qi Guo

Institutions: Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402896752

FWCI: 0.514

Cites: 44

Cited by: 5

Related to: 10