Work

Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

Year: 2024

Type: article

Abstract: application of a 3C-SiC layer on a Si diaphragm to achieve higher stress amplification Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

Source: Ministry of Science and Technology Vietnam

DOI: 10.31276/vjste.2023.0016

Authors: Nguyen Chi Cuong, Trinh Xuan Thang, Lam Minh Thinh, Vuong Dinh Duy Phuc, Truong Huu Ly, Ngo Vo Ke Thanh, Le Quoc Cuong

Institutions: Saigon Technology University, Saigon University

Language: English

Topic: Advanced MEMS and NEMS Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4402902237

FWCI: 0.104

Cites:

Cited by: 1

Related to: 10