Work

Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3462375

Authors: Mohammad Ateeb Munshi, Mehak Ashraf Mir, Vipin Joshi, Rajarshi Roy Chaudhuri, Rasik Malik, Mayank Shrivastava

Institution: Indian Institute of Science Bangalore

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

Award: G4382959029

OpenAlex ID: W4402915761

FWCI: 0.625

Cites: 32

Cited by: 6

Related to: 10