Work

Low QCVF 20 A/1.4 kV β-Ga₂O₃ Vertical Trench High-k RESURF Schottky Barrier Diode With Turn-On Voltage of 0.5 V

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3469283

Authors: Saurav Roy, Benjamin Kostroun, Yizheng Liu, Jacqueline Cooke, Arkka Bhattacharyya, Carl Peterson, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy

Institutions: University of California, Santa Barbara, University of Utah

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Office of Scientific Research

Award: G3678902929

OpenAlex ID: W4402916071

FWCI: 1.928

Cites: 30

Cited by: 25

Related to: 10