Work

GaN-Based Resonant-Cavity Light-Emitting Diode Towards a Vertical-Cavity Surface-Emitting Laser

Year: 2024

Type: article

Source: IEEE Journal of Selected Topics in Quantum Electronics

DOI: 10.1109/jstqe.2024.3469978

Authors: Chuanjie Li, Meixin Feng, Jiaqi Liu, Wei Liu, Xiujian Sun, Jianxun Liu, Zhiwei Sun, Gangyi Zhu, Shuming Zhang, Qian Sun, Hui Yang

Institutions: ShanghaiTech University, University of Science and Technology of China, Nanjing University of Posts and Telecommunications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Türkiye Bilimsel ve Teknolojik Araştırma Kurumu, Science and Technology Program of Suzhou, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1058890890, G2130918107, G3265339480, G4796349636, G5315979992, G5739167345, G6964371205, G7241895887, G7915031597, G8730630127

OpenAlex ID: W4402916192

FWCI: 0.595

Cites: 43

Cited by: 4

Related to: 10