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Molecular switching by proton-coupled electron transport drives giant negative differential resistance

Year: 2024
Type: article
Abstract: To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memory on/off ratios of (2.4 ± 0.6) × 103. The switching dynamics probabilities are modulated by bias voltage sweep rate and can also be controlled by pH and relative humidity, confirmed by kinetic isotope effect measurements. The demonstrated dynamical and environment-specific modulation of giant NDR and memory effects provide new opportunities for bioelectronics and artificial neural networks. It is a challenge to develop molecular switches with time-dependent probabilities. Here, the authors present a molecular switch based on proton-coupled electron transfer reaction with demonstration of dynamical and environment-specific modulation of giant negative differential resistance and memory effects.
DOI: 10.1038/s41467-024-52496-y
Authors: Qian Zhang, Yulong Wang, Cameron Nickle, Ziyu Zhang, Andrea Leoncini, Dong-Chen Qi, Kai Sotthewes, Alessandro Borrini, Harold J. W. Zandvliet, Enrique del Barco, Damien Thompson, Christian A. Nijhuis
Institutions: Chongqing University, National University of Singapore, University of Central Florida, Queensland University of Technology, University of Twente, University of Limerick
Language: English
Open Access status: gold
Estimated APC paid: $6,790
Funders: National Science Foundation, Australian Nuclear Science and Technology Organisation, Australian Synchrotron, Ministry of Education - Singapore, Higher Education Authority, Science Foundation Ireland, National Natural Science Foundation of China, Nederlandse Organisatie voor Wetenschappelijk Onderzoek, Ministry of Education, India, Natural Science Foundation of Chongqing, Centre Scientifique et Technique du Bâtiment, Irish Centre for High-End Computing, Australian Research Council, Division of Electrical, Communications and Cyber Systems
Awards: 2D Multiferroics: From Materials Design to Device Conceptualization, Intelligent Molecules for Brain-Like Devices, Designing Elemental Devices for Molecular Electronics - Molecular Diodes, G3104004364, G3503071639, G504305494, G6634288411, SSPC_Phase 2
OpenAlex ID: W4402923143
FWCI: 2.769
Cites: 55
Cited by: 27
Related to: 10