Work

Dose-Dependent Performance of Boron-Implanted Self-Aligned Bottom-Gate IGZO TFTs

Year: 2024

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/11403.0025ecst

Authors: Eli Powell, Muhammad Salahuddin Kabir, Rahnuma Rifat Chowdhury, Robert G. Manley, Bin Zhu, Karl D. Hirschman

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402931179

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