Work

High Performance CMOS RF Switch Based on Highly Carbon Doped Raised Source/Drain Regions

Year: 2024

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/11402.0317ecst

Authors: Antonin Chollet, Isabelle Berbezier, Luc Favre, Maxime Labrot, Julien Dura, Kassem Melhem, Romain Duru, François Figarols, Mathieu Abel, Sylvie Bodnar, B. Bartolotti

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402931198

FWCI:

Cites:

Cited by:

Related to: 10