Work

An Assessment of the Lateral Selective Etching, with HCl, of High Versus Low Ge Content SiGe Layers

Year: 2024

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/11402.0055ecst

Authors: Jean-Michel Hartmann, Bernard Previtali, Francois Aussenac, Pattamon Dezest, Olivier Glorieux, Adrien Blot-Saby, Ludovic Couture, Sylvain Barraud

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402931215

FWCI: 2.398

Cites:

Cited by: 3

Related to: 10