Low Disorder and High Mobility 2DEG in Si/SiGe Fabricated in 200 mm BiCMOS Pilot line
Year: 2024
Type: conference-paper
Source: ECS Transactions
Authors: Alberto Mistroni, Felix Reichmann, Yuji Yamamoto, Marvin Hartwig Zöllner, Giovanni Capellini, Laura Diebel, Dominique Bougeard, Marco Lisker
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4402931400