Work

Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI

Year: 2024

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/11402.0271ecst

Authors: Justine Lespiaux, Joël Kanyandekwe, Tanguy Marion, Lazhar Saidi, Valérie Lapras, Alice Bond, Fabien Bringuier, Jérôme Richy, Alan Thouvard, Tim Biet, Emmanuel Nolot, Ludovic Couture, Laurent Brunet, Philippe Rodriguez, Eva Dos Reis, Nicolas Gauthier, Adrien Blot-Saby, Jean-Michel Hartmann

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402931601

FWCI: 1.599

Cites:

Cited by: 2

Related to: 10