Work

Advanced SiGe:B Raised Sources and Drains for p-type FD-SOI MOSFETs

Year: 2024

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/11402.0185ecst

Authors: Jean-Michel Hartmann, Francois Aussenac, Olivier Glorieux, David Cooper, Sebastien Kerdilès, Zdenek Chalupa, Francois Boulard, Heimanu Niebojewski, Blandine Duriez, Thomas Bordignon, Sebastien Peru, Pawel Michałowski, Richard Daubriac, Fuccio Cristiano

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402932000

FWCI: 0.799

Cites:

Cited by: 1

Related to: 10