Work

200 mm Wafer Level Characterization at 2 K of Si/SiGe Field-Effect Transistors

Year: 2024

Type: conference-paper

Source: ECS Transactions

DOI: 10.1149/11402.0133ecst

Authors: Nikola David Komericki, Pascal Muster, Felix Reichmann, Till Huckemann, Daniel Kaufmann, Yuji Yamamoto, Marco Lisker, Wolfram Langheinrich, Lars R Schreiber, Hendrik Bluhm, Ruediger Quay

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402932195

FWCI: 2.299

Cites:

Cited by: 1

Related to: 10