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Low-Voltage Schottky p-GaN HEMT Properties under Extreme Repetitive Short-Circuit Operation Conditions : 2DEG Pinch-off, Stability, Aging, Robustness and Failure-Modes Analysis [Abstract]

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Richardeau, Frédéric, Ghizzo, Lucien, Trémouilles, David, Vinnac, Sébastien

Institutions: Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Institut National Polytechnique de Toulouse, Laboratoire Plasma et Conversion d'Energie, Université de Toulouse, Laboratoire d'Analyse et d'Architecture des Systèmes, Thales (France)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4402952864

FWCI:

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Related to: 10