Work

Understanding and control of the formation of metallic nanoscale silicide contacts on vertical nanostructured channel for advanced 3D nanoelectronics devices: from Si to high mobility materials

Year: 2024

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Müller, Jonas, Mallet, Nicolas, Demoulin, Rémi, Cancellara, Leonardo, Lecestre, Aurélie, Cristiano, Filadelfo, Larrieu, Guilhem

Institution: Laboratoire d'Analyse et d'Architecture des Systèmes

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402970123

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Related to: 10