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Investigating the Arc-Shaped Kink Drain Voltage of Drain Current With Capacitance-Voltage Measurement Method in GaN HEMTs

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Year: 2024
Type: article
Source: IEEE Transactions on Device and Materials Reliability
DOI: 10.1109/tdmr.2024.3467344
Authors: Jui-Tse Hsu, Shawn S. H. Hsu, Ting-Chang Chang, Chen-Hsin Lien, Ting-Tzu Kuo, Chien-Hung Yeh, Jia-Hong Lin, Ya-Huan Lee, Cheng-Hsien Lin, Wei-Chieh Hung, I-Yu Huang
Institutions: National Tsing Hua University, National Sun Yat-sen University
Language: English

Topic: GaN-based semiconductor devices and materials
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council
Awards: G7070869566, G797938675
OpenAlex ID: W4402978148
FWCI:
Cites: 28
Cited by:
Related to: 10
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