Work

Investigation of Switching Characteristics Degradation of GaN HEMT Under Power Cycling Aging

Year: 2024

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2024.3468013

Authors: Shengwei Gao, Xiaoyu Fu, Xingtao Sun, Tian Jinrui, Yesen Han

Institution: Tiangong University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4402978158

FWCI: 0.297

Cites: 22

Cited by: 2

Related to: 10