Work

Hetero-Integrated InP RTD-SiGe BiCMOS Source With Fundamental Injection Locking

Year: 2024

Type: article

Abstract: This work shows the hetero-integration of an InP resonant tunneling diode (RTD) on a SiGe-BiCMOS mm-Wave integrated circuit (MMIC) for near-field wireless fundamental injection locking. We observe injection locking within a locking range of 26 GHz and a total power during injection locking of −3.4 dBm. The SiGe-based local oscillator (LO) is integrated with a frequency doubler and an on-chip patch antenna that operates between 220 and 247 GHz, providing a maximum output power of −7 dBm. The LO is near-field coupled to an InP RTD oscillator integrated into a slot antenna which reaches a free running maximum output power of −6.2 dBm. The chip-to-chip integration is carried out through flip-chip bonding.

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2024.3458196

Authors: E. Mutlu, C. Preuss, F. Vogelsang, R. Kress, J. Bott, B. Sievert, J. Watermann, J. Abts, A. Rennings, D. Erni, N. Pohl, N. Weimann

Institutions: University of Duisburg-Essen, Ruhr University Bochum, Fraunhofer Institute for High Frequency Physics and Radar Techniques

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,495

OpenAlex ID: W4402978244

FWCI: 0.312

Cites: 23

Cited by: 3

Related to: 10