Work

Improved Subthreshold Characteristics of Epi-Silicon FinFET via Fin Surface Passivation Technologies

Year: 2024

Type: article

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2162-8777/ad8187

Authors: Wang Peng, Guanqiao Sang, Kun Yang, Jiaxin Yao, Lianlian Li, Lei Cao, Renjie Jiang, YuPeng Lu, QingKun Li, Qingzhu Zhang, Junfeng Li, Huaxiang Yin

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403013795

FWCI: 0.308

Cites: 33

Cited by: 3

Related to: 10