Work

Growth of Ta-doped SnO2 on GaN as a UV-transparent conducting electrode and band alignment properties of the heterojunction

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0213093

Authors: Lu Yang, Ziqian Sheng, Siliang Kuang, Wenjing Xu, Yaxin He, Xu Zhang, Xiangyu Xu, Kelvin H. L. Zhang

Institution: Xiamen University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Shenzhen Science and Technology Innovation Program

Awards: G1287332986, G7162073858

OpenAlex ID: W4403041645

FWCI: 0.297

Cites: 37

Cited by: 2

Related to: 10