Work

Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate

Year: 2024

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.4c00683

Authors: CJ. Cheng-Jun Huang, Shuo Hwai, Tsai-Fu Chung, Chien-Nan Hsiao, Hsin-Yi Tsai, Jing-Cheng Lin, Yu-Jin Hung, Bo-Cheng Lin, Shih-Meng Chen, Hung-Ching Tsai, Jason Woo, Edward. Yi Chang, Mau-Chung Frank Chang

Institutions: National Yang Ming Chiao Tung University, University of California, Los Angeles, National Institutes of Applied Research, National Center for Instrumentation Research

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Award: G403275404

OpenAlex ID: W4403042796

FWCI: 0.434

Cites: 21

Cited by: 3

Related to: 10