Work

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0230096

Authors: Kangyao Wen, Jiaqi He, Yang Jiang, Fangzhou Du, Chenkai Deng, Peiran Wang, Chuying Tang, Wenmao Li, Qiaoyu Hu, Yuhan Sun, Qing Wang, Yulong Jiang, Hongyu Yu

Institutions: Fudan University, Southern University of Science and Technology, State Key Laboratory of ASIC and System

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Natural Science Foundation of Shenzhen City, Shenzhen Government, Guangdong Science and Technology Department, National Natural Science Foundation of China-China Academy of General Technology Joint Fund for Basic Research

Awards: G5098756088, G5715235155, G5997241033, G6394763329, G6485946272

OpenAlex ID: W4403066417

FWCI: 0.297

Cites: 23

Cited by: 2

Related to: 10