Year: 2024
Type: article
Abstract: Femtosecond-laser-fabricated black silicon has been widely used in the fields of solar cells, photodetectors, semiconductor devices, optical coatings, and quantum computing. However, the responsive spectral range limits its application in the near- to mid-infrared wavelengths. To further increase the optical responsivity in longer wavelengths, in this work, silicon (Si) was co-hyperdoped with nitrogen (N) and selenium (Se) through the deposition of Se films on Si followed by femtosecond (fs)-laser irradiation in an atmosphere of NF3. The optical and crystalline properties of the Si:N/Se were found to be influenced by the precursor Se film and laser fluence. The resulting photodetector, a product of this innovative approach, exhibited an impressive responsivity of 24.8 A/W at 840 nm and 19.8 A/W at 1060 nm, surpassing photodetectors made from Si:N, Si:S, and Si:S/Se (the latter two fabricated in SF6). These findings underscore the co-hyperdoping method’s potential in significantly improving optoelectronic device performance.
Source: Nanomaterials
DOI: 10.3390/nano14191591
Institutions: Chinese Academy of Sciences, Fudan University, Finnish Geospatial Research Institute, Shanghai Institute of Technical Physics, State Key Laboratory of Surface Physics, Aalto University, Chongqing Normal University, Southwest University, National University of Defense Technology, State Key Laboratory of Pulsed Power Laser Technology, University of Shanghai for Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,296
Awards: G1084931210, G1441023402, G1887582272, G1980237058, G2269170388, G2788109333, G3437416590, G4427435602, G5278890309, G5606923074, G5632705124, G585157656, G7194141062, G7393761399, G7403669216, Ultrafast Data Production with Broadband Photodetectors for Active Hyperspectral Space Imaging, G8575616068, G939122593
OpenAlex ID: W4403071684