Work

Reading reliability in 1S1R OTS+PCM devices based on Double-Patterned Self-Aligned structure

Year: 2024

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Antonelli, Renzo, Bourgeois, Guillaume, Meli, Valentina, Saghi, Zineb, Monniez, Théo, Martin, Simon, Castellani, Niccoló, Bernard, Mathieu, Fellouh, Leila, Salvi, Antoine, Gout, Sylvain, Andrieu, Francois, Souifi, Abdelkader, Navarro, Gabriele

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire des Technologies de la Microélectronique, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes, École Centrale de Lyon, Laboratoire Ampère

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, Agence Nationale de la Recherche, Electronic Components and Systems for European Leadership

Awards: G1190173965, G2488644748, G7240651115, Embedded storage elements on next MCU generation ready for AI on the edge

OpenAlex ID: W4403083097

FWCI:

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