Work

Trap-induced electrical degradation in edge-termination-hardened NiO/ β -Ga2O3 heterojunction under 10 MeV fluence-dependent proton irradiations

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0230979

Authors: Z. L. Zhang, N. Sun, T. Q. Wang, F. Zhou, C. M. Liu, C. H. Qi, G. L. Ma, Y. Q. Zhang, H. Y. Li, Z. F. Lei, J. D. Ye, H. Lu, M. X. Huo, L. Y. Xiao

Institutions: Harbin Institute of Technology, Nanjing University, China Academy of Engineering Physics, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G1645619863, G1693754126, G3464628322, G4259696608, G4700815263, G512247061, G5250588225, G6906729860, G8553384389, G8896928034

OpenAlex ID: W4403101503

FWCI: 0.616

Cites: 33

Cited by: 8

Related to: 10