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Pulsed‐Laser Deposition of Ge‐Doped BiTe Nanofilms and Their Application in Room‐Temperature Long‐Wave Infrared Photodetection (Advanced Optical Materials 28/2024)

Year: 2024

Type: article

Abstract: Pulsed-Laser Deposition of Ge-Doped BiTe Nanofilms for Photodetection Pulsed-laser deposition is developed for the large-area synthesis of Ge-doped BiTe nanofilms, which are successfully exploited for room-temperature high-speed long-wave infrared photodetection and optical communications. For more information on these achievements, see article number 2401937 by Jiandong Yao, Huanjun Chen, and co-workers.

Source: Advanced Optical Materials

DOI: 10.1002/adom.202470087

Authors: Wan Wang, Ximiao Wang, Jiandong Yao, Huanjun Chen, Guowei Yang

Institutions: Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4403135634

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