Optimization of the melt and quench behavior of phase-change RF switch to improve power handling
Year: 2024
Type: conference-paper
Abstract: This paper presents two methods to improve the reliability and the melting/quench behavior of phase change materials (PCM) used in radiofrequency (RF) switches. Results show benefits of the addition of an aluminum nitride heat spreading layer and the reduction of the distance between the substrate and the PCM. The reduction of the PCM cooling time shown in simulations and the power handling improvement observed in measurements on series structures support our proposed designs of GeTe based switches with RF gaps lengths over 4μm, allowing the power handling going to reach 31dBm in both ON and OFF states.
Institutions: STMicroelectronics (France), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Polytechnique Hauts-de-France, Centrale Lille Institut
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: STMicroelectronics
OpenAlex ID: W4403147182