Silicon carbide nanowire-reinforced micro-Ag joint based on pinning effect for power electronics packaging
Year: 2024
Type: article
Abstract: Low-temperature sintering Ag technology is a feasible approach employed in power electron devices. In this study, the influence of the different amounts (0, 0.03, 0.05, 0.07, 0.10, 0.20 wt.%) of silicon carbide nanowires (SiC NWs) on the properties and microstructure of micro-Ag paste sintered at 250 °C without pressure has been investigated. The results exhibit that the shear strength of sintered Ag-xSiC joints first increases and then decreases with the rising amount of SiC NWs. The bonding strength of the Ag-SiC joint reaches a maximum of 43.57 MPa after doping 0.07 wt.% SiC NWs, with an increase of 13% compared with the pure Ag joint. This enhancement mechanism can be owed to the Orowan mechanism as well as the pinning effect. Meanwhile, the electrical resistivity of Ag-0.07SiC shows a minimum value of 5.20 μΩ·cm, approximately 10.65% lower than pure Ag joint. This is attributed to the well-sintered Ag network and the bridging effect of SiC NWs distributed in Ag particles. It is hoped that this research could develop a new micro-Ag paste with outstanding properties that could be employed in high-power electronic devices.
Source: Materials & Design
Institution: Sun Yat-sen University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,200
OpenAlex ID: W4403155200