Utilizing the Ability of Few-Layer MoS2 Integrated with MOCVD-Grown ZnGa2O4 for Thermally Stable Deep Ultraviolet Detection Performance
Year: 2024
Type: article
Source: ACS Applied Electronic Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403171945
