Work

A Step‐by‐Step Approach for Replacing Si‐IGBTs With SiC‐MOSFETs Modules in Industrial Power Converters

Year: 2024

Type: article

Source: International Journal of Circuit Theory and Applications

DOI: 10.1002/cta.4295

Authors: Edemar O. Prado, Pedro C. Bolsi, Hamiltom C. Sartori, José R. Pinheiro

Institutions: Universidade Federal da Bahia, Universidade Federal de Santa Maria

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

Funders: Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico

OpenAlex ID: W4403175334

FWCI: 0.416

Cites: 36

Cited by: 4

Related to: 10