Effect of SiCN thin film interlayer for ZnO-based RRAM
Year: 2024
Type: article
Source: Nanotechnology
Institutions: Chungnam National University, National NanoFab Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G3695889598, G7438400422
OpenAlex ID: W4403175822
