Inverted All-Inorganic Nanorod-Based Light-Emitting Diodes via Electrophoretic Deposition
Year: 2024
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide High performance and high stability in all-inorganic solution processed nanocrystal-based light-emitting diodes (LEDs) are highly attractive for large area devices compared to organic material-based LEDs. In this work, an inverted all-inorganic LED structure is designed to have an easy integration with thin-film transistors. Adopting robust inorganic materials such as Ni 1– x O nanoparticle films as a hole transport layer (HTL) is beneficial for the performance of LED. Herein, we have optimized the HTL by introducing Mg into Ni 1– x O to bridge the difference in energy offset between the nanorod emissive layer and the HTL, in addition to the advantages of low temperature solubility of Ni 1– x O:Mg nanoparticles. Furthermore, CdSe/CdS-based nanorods via electrophoretic deposition (EPD) are amassed in a vertically aligned (VA-NR) fashion as an emissive layer to facilitate the carrier transportation. Fostering these approaches enabled an EQE of 1.2% of the fabricated device, establishing the viability for further development of efficient and highly stable nanocrystal-based LEDs.
Source: ACS Applied Nano Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Awards: EPSRC and SFI Centre for Doctoral Training in Photonic Integration and Advanced Data Storage, G2204040474, G2680800547, G4832623537, IPIC_Phase 2, EPSRC-SFI CDT in Photonic Integration and Advanced Data Storage, G4918190384, G5098725405, G6215318389, Electrically pumped all-inorganic LEDs and lasers by colloidal nanorod heterogeneous assembly, G7709587500, G7874229829, G800496194, G840432821
OpenAlex ID: W4403191683