Low-symmetry layered semiconductor In2Te5 for promising polarization-sensitive photodetector
Year: 2024
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0230193
Institution: Hunan Normal University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G2855586588, G7185722833, G7859827380
OpenAlex ID: W4403193755
