Work

Characterization and modeling of the mobility, threshold voltage, and subthreshold swing in p-GaN gate HEMTs at cryogenic temperatures

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0223576

Authors: Shivendra Kumar Singh, Thien Sao Ngo, Tian-Li Wu, Yogesh Singh Chauhan

Institutions: National Yang Ming Chiao Tung University, Indian Institute of Technology Kanpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science and Technology Council, Ministry of Education

Award: Development of Novel Algan/Gan Schottky Barrier Diode with P-Gan Edge Termination Co-Integrated in Enhancement-Mode Gan Power Hemts Platform for Single-Chip Converter Applications

OpenAlex ID: W4403193881

FWCI: 1.881

Cites: 41

Cited by: 13

Related to: 10