Work

Designing High-Performance Nanoscale Spin-MOSFET Devices by Using Two-Dimensional Half-Metallic Cr2Se3

Year: 2024

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c13805

Authors: Shao-Xian Wang, Ya-Qi Kong, Sheng-Yi Zhang, Ming-Lang Wang, Ming-Zhi Wei, Chuan-Kui Wang, Guang-Ping Zhang

Institutions: Shandong Normal University, Qilu University of Technology, Shandong Academy of Sciences

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G13613995, G6040370134

OpenAlex ID: W4403195353

FWCI: 0.284

Cites: 64

Cited by: 3

Related to: 10