Work

Dynamical reorientation of spin multipoles in silicon carbide by transverse magnetic fields

Year: 2024

Type: article

Abstract: The long-lived and optically addressable high-spin state of the negatively charged silicon vacancy (${V}_{\mathrm{Si}}$) in silicon carbide makes it a promising system for applications in quantum technologies. Most studies of its spin dynamics have been performed under external magnetic fields applied along the symmetry axis. Here, we find that the application of weak magnetic fields perpendicular to the symmetry axis leads to nontrivial behavior caused by the dynamical reorientation of the ${V}_{\mathrm{Si}}$ spin multipole under optical excitation. Particularly, we observe the inversion of the quadrupole-spin polarization in the excited state and the appearance of a dipole-spin polarization in the ground state. The latter is much higher than the thermal polarization and cannot be induced solely by optical excitation. Our theoretical calculations reproduce well all sharp features in the spin-resonance spectra and shine light on the complex dynamics of spin multipoles in these kinds of solid-state systems.

Source: Physical Review Applied

DOI: 10.1103/physrevapplied.22.044021

Authors: A. Hernández-Mínguez, A.V. Poshakinskiy, M. Hollenbach, P.V. Santos, G.V. Astakhov

Institutions: Paul Drude Institute for Solid State Electronics, Forschungsverbund Berlin, Institute of Photonic Sciences, Barcelona Institute of Science and Technology, Helmholtz-Zentrum Dresden-Rossendorf

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Deutsche Forschungsgemeinschaft

Award: G1308025709