Work

Investigation of Electrical Characteristics on SiC MOSFET and JBS-Integrated MOSFET at Cryogenic Temperatures

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3467211

Authors: Zhaoyuan Gu, Mingchao Yang, Yi Yang, Weihua Liu, Chuanyu Han, Xin Li, Li Geng, Yue Hao

Institutions: Xi'an Jiaotong University, Xidian University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2371072008

OpenAlex ID: W4403210316

FWCI: 1.561

Cites: 28

Cited by: 15

Related to: 10