Work

Single Transistor Latch Near 1 V With Asymmetric Biasing in a MOSFET

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3469181

Authors: Sang-Won Lee, Seung-Il Kim, Seong-Yun Yun, Joon-Kyu Han, Ji-Man Yu, Joon-Ha Son, Yang-Kyu Choi

Institutions: Korea Advanced Institute of Science and Technology, Sogang University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, IC Design Education Center

OpenAlex ID: W4403210386

FWCI: 0.832

Cites: 18

Cited by: 8

Related to: 10