Work

Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs

Year: 2024

Type: conference-paper

Source: Annual EOS/ESD Symposium (EOS/ESD)

DOI: 10.23919/eos/esd61719.2024.10702150

Authors: Wei-Min Wu, Shih-Hung Chen, Dongyang Yan, Bertrand Parvais, Nadine Collaert

Institution: IMEC

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403210736

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Cites: 13

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Related to: 10