Work

High-Performance Schottky-Barrier IGZO Thin-Film Transistors Based on Ohmic/Schottky Hybrid Contacts

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3469165

Authors: Yuzhi Li, Guangshuo Cai, Biao Tang, Shenghan Zou, Linfeng Lan, Zheng Gong

Institutions: Guangdong Academy of Sciences, Guangdong Polytechnic Normal University, South China Normal University, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G2414193896, G3049251379, G3204904707, G7610164471, G986675006

OpenAlex ID: W4403210874

FWCI: 0.833

Cites: 26

Cited by: 8

Related to: 10