Comparative Analysis of 12-nm Gate-all-Around Vertically Stacked Nanosheet Field Effect Transistor for High-k Gate-oxide Dielectrics
Year: 2024
Type: conference-paper
Authors: Kanchan Saini, Vinod Kumar
Institution: National Institute of Technology Hamirpur
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403212739