Optoelectronic stimuli-driven switchable memristors with multilevel resistance states for neuromorphic vision sensors
Year: 2024
Type: article
Abstract: The developed optoelectronic synaptic devices with resistive switching enable efficient, fault-resistant image recognition. The PMMA/ZnO/2IF memristor array advances neuromorphic vision systems, offering high accuracy and low power consumption.
Source: Journal of Materials Chemistry C
DOI: 10.1039/d4tc01796j
Institution: National Changhua University of Education
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Awards: G3508333035, G534768903, G8738586774
OpenAlex ID: W4403215067
