Work

Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures

Year: 2024

Type: article

Abstract: We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapping independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron–electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage–current characteristics that are a signature for the collective depinning and sliding of the electron solid.

Source: Applied Physics Letters

DOI: 10.1063/5.0233154

Authors: M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, S. V. Kravchenko

Institutions: Osipyan Institute of Solid State Physics RAS, National Taiwan University, Northeastern University

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: Russian Science Foundation

Award: G5446996512