Work

Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect

Year: 2024

Type: article

Source: Applied Physics Reviews

DOI: 10.1063/5.0224203

Authors: Suk Hyun Lee, Han Sol Park, Seong Jae Shin, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Kyung Do Kim, Taehwan Moon, Cheol Seong Hwang

Institutions: Seoul National University, Ajou University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G7208142174

OpenAlex ID: W4403216783

FWCI: 0.615

Cites: 65

Cited by: 6

Related to: 10