Investigating the Performance Optimization of Three‐Quantum‐Well High Electron Mobility Transistor Device: Analyzing Operational Characteristics and Gate Voltage Influence
Year: 2024
Type: article
Source: physica status solidi (a)
Authors: Kuntavai Thangavel, Prasanth Aruchamy, Prasad Joghee, Chandrasekar Palanisamy
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4403219440