Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode
Year: 2024
Type: article
Abstract: Herein, AlGaN/GaN lateral diode with the Schottky‐Metal‐Insulator‐Semiconductor (MIS) cascode anode (CALD) to optimize forward voltage drop (VF) and reverse leakage current (ILEAK) trade‐off is proposed. In the CALD device, a normally‐on Ni/HfO2/AlGaN MIS‐controlled channel as well as a lateral Ni/GaN Schottky contact are cascoded at the anode. The designed normally‐on MIS‐controlled channel has high electron concentration at forward bias and prevents high electric‐field at reverse bias, which ensure both low VF and low ILEAK. Meanwhile, the Ni/GaN Schottky contact with a high Schottky barrier height further suppresses the ILEAK. As a result, the fabricated CALD demonstrates an optimized VF–ILEAK trade‐off relationship, including a low VF of 1.6 V and a low ILEAK of 5.2 × 10−8 A mm−1 (at reverse voltage of 400 V), together with a high breakdown voltage (BV) >700 V. These high performances suggest that the CALD can be a promising candidate for GaN power diode applications requiring a better VF–ILEAK trade‐off.
Source: physica status solidi (a)
Authors: Fangzhou Wang, Changhong Gao, Guojian Ding, Cheng Yu, Zhuocheng Wang, Zhuocheng Wang, Xiaohui Wang, Qi Feng, Ping Yu, Peng Zuo, Yang Wang, Wanjun Chen, Haiqiang Jia, Bo Zhang, Hong Chen, Zeheng Wang, Zeheng Wang
Institutions: Songshan Lake Materials Laboratory, Southern University of Science and Technology, University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Commonwealth Scientific and Industrial Research Organisation, CSIRO Manufacturing
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,600
Awards: G3700464253, G4544062171
OpenAlex ID: W4403219945