Work

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

Year: 2024

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ad8455

Authors: Shumeng Yan, Tianying Yang, Tingting Yuan, Guoguo Liu, Tao Xu, Lijie Chen, Chuan Cheng, Gaopeng Chen

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403222600

FWCI:

Cites: 9

Cited by:

Related to: 10